| 摘要 |
The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser device according to the invention includes a first p type AlGalnP-based clad layer formed on an active layer, and a second p-type AlGalnP-based clad layer formed on the first p-type AlGalnP-based clad layer and having a ridge structure. The first p-type AlGalnP-based clad layer is Zn-doped with a concentration that restrains Zn diffusion into the active layer, and the second p-type AlGalnP-based clad layer is Mg-doped with a concentration higher than that of the first AlGalnP-based clad layer.
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