| 摘要 |
The present invention provides a method for producing a semiconductor wafer comprising at least steps of, forming a Si<SUB>1-X</SUB>Ge<SUB>X </SUB>layer ( 0 <X< 1 ) with a critical film-thickness at a deposition temperature of the layer or thinner on a surface of a silicon single crystal wafer and then forming a Si layer with a critical film-thickness at a temperature of later relaxing heat-treatment or thinner thereon, forming an ion-implanted layer for relaxation inside the silicon single crystal wafer by implanting at least one kind of hydrogen ion, rare gas ion, and Si ion through the Si layer, thereafter performing the relaxing heat-treatment, thereby to make the Si<SUB>1-X</SUB>Ge<SUB>X </SUB>layer lattice-relaxed and to form a strained Si layer by introducing lattice strain in the Si layer, thereafter depositing Si on a surface of the strained Si layer, and thereby to increase a thickness of the strained Si layer. Thereby, there is provided a method for producing a semiconductor wafer formed with a strained Si layer in which misfit dislocation is not generated and the layer has sufficient strain and has a thickness which can apply to device designs of various specifics.
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