发明名称 Sputtering target and method for production thereof
摘要 A sintered sputtering target having a structure where the average crystallize size is 1 nm to 50 nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. Thereby provided is a high density target having an extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production.
申请公布号 US2006185771(A1) 申请公布日期 2006.08.24
申请号 US20040566116 申请日期 2004.07.14
申请人 INOUE AKIHISA;KIMURA HISAMICHI;SASAMORI KENICHIRO;YAHAGI MASATAKA;NAKAMURA ATSUSHI;TAKAHASHI HIDEYUKI 发明人 INOUE AKIHISA;KIMURA HISAMICHI;SASAMORI KENICHIRO;YAHAGI MASATAKA;NAKAMURA ATSUSHI;TAKAHASHI HIDEYUKI
分类号 C22C45/00;C22C5/00;C22C9/00;C22C16/00;C22C19/07;C22C21/10;C22C45/02;C22C45/10;C22F1/053;C23C14/34 主分类号 C22C45/00
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