Semiconductor component e.g. trench transistor, has via arranged above trench areas, such that part of overlapping area contacts part of electrode structure by via, where isolation structure areas overlap with each other

摘要

The component has an electrode structure (4) embedded in a trench structure, and trench areas containing a part of the structure (4). The trench areas are arranged relative to each other, such that areas of an isolation structure (5) overlap with each other in an overlapping area (16). A via (13) is arranged above the trench areas, such that a part of the overlapping area contacts a part of the structure (4) by the via. An independent claim is also included for a method of producing contact areas in an electrode structure that is provided in a semiconductor body of a semiconductor component.