| 摘要 |
<p>A semiconductor device manufacturing method by which a penetrating electrode is formed by surely applying a conductor by a simple method. The semiconductor device manufacturing method is characterized in that the method is provided with a step wherein a substrate is thinned from its rear plane in a status where a first supporting body is attached on a substrate front plane, the first supporting body is removed from the substrate, a second supporting body having an opening section is mounted on the substrate rear plane, a penetrating hole connected to the opening section of the second supporting body is formed on the substrate prior to or after mounting of the second supporting body, an insulating film is formed in the penetrating hole section, and the penetrating hole of the substrate is filled with the conductor.</p> |
