| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element which is easily manufactured, have high reliability and do not require a tunnel insulating film, and provide a memory device and a light emitting element. <P>SOLUTION: The memory element is provided with an electrically conductive ring 13, a magnetic body 10, a first wiring 14 and a second wiring 15. The magnetic body 10 is inserted through a through-hole of the ring 13. The first wiring 14 is extended from a first portion of the outer peripheral surface of the ring 13 and the second wiring 15 is extended from the second portion on the outer peripheral surface. In the memory element, information written in the magnetic body 10 can be read by detecting the current value of the current flowing in the first wiring 14 when electrons are moved from the second wiring 15 to the first wiring 14. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
