GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride system compound semiconductor which has a large diameter and can utilize a conventional silicon process, and to provide a method for manufacturing the same.

SOLUTION: The gallium nitride system compound with excellent properties as a semiconductor material is formed on a comparatively inexpensive Si substrate. The conventional silicon process can be utilized by forming on the Si substrate.

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