| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a III-V nitride semiconductor thin film of good quality in which the surface of an Si substrate does not deteriorate and the throughput does not lower even if Ga or N radicals are generated from matters adhering to the inside of a furnace. <P>SOLUTION: In the process for producing a III-V nitride semiconductor by supplying material gas containing a plurality of group III or group V elements onto a heated Si substrate and growing a III-V nitride semiconductor through thermal decomposition reaction, the Si substrate 1 is heated while supplying material gas containing Si element so that the temperature of the Si substrate 1 rises while growing Si on the Si substrate 1 and then a III-V nitride semiconductor such as an AlN layer 2 is grown. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
