| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new n-type transistor, an n-type transistor sensor and a manufacturing method for the n-type transistor channel that is different from the conventional devices in the transistor, using a nanotube-shaped structure for the channel. <P>SOLUTION: The transistor 1 has a source electrode 2, a drain electrode 3, a gate electrode 4 and the n-type channel 5 formed between the source electrode 2 and the drain electrode 3, and formed of the nanotube-shaped structure. A film 6, made of a nitrogen compound, is formed directly on the channel 5 for the transistor 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
