发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing variation in breakdown voltage at a low manufacturing cost. SOLUTION: A discontinuous carbon thin film 15 is inserted between an interlayer insulation film 14 made of a passivation film and a sealing resin layer 16 made of molded resin, whereby mobile ions accumulating on the interface between the layer 16 and the film 14 are neutralized via the film 15. Thus, the variation in breakdown voltage due to the mobile ions can be prevented. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006222210(A) 申请公布日期 2006.08.24
申请号 JP20050033050 申请日期 2005.02.09
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD 发明人 WATANABE YASUMASA;TERANISHI HIDEAKI
分类号 H01L23/52;H01L21/3205;H01L21/336;H01L21/8234;H01L23/29;H01L23/31;H01L27/088;H01L29/06;H01L29/78 主分类号 H01L23/52
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