| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacity type semiconductor acceleration sensor, not generating problems such as adhesion of a moving part and a fixed electrode. SOLUTION: This sensor wherein a moving electrode 4 of the moving part 1 is arranged oppositely to the fixed electrodes 6, 7 and an acceleration is detected based on a capacity change between the moving electrode 4 and the fixed electrodes 6, 7 when the moving part 1 is displaced by receiving the acceleration, is constituted of an SOI substrate 20 having an insulating layer 22 between the first semiconductor layer 21 and the second semiconductor layer 23. PIQ 30 and a resist 31 are applied from the surface, and prescribed domains of the first semiconductor layer 21 and the insulating layer 22 are removed from the back surface, to thereby expose the second semiconductor layer 23 in a domain where the moving part 1 and the fixed electrodes 6, 7 are formed. Penetrating grooves 10 are formed in the removed region on the second semiconductor layer 23, and the moving part 1 and the fixed electrodes 6, 7 are formed on the second semiconductor layer 23 by the penetrating grooves 10. COPYRIGHT: (C)2006,JPO&NCIPI
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