| 摘要 |
PROBLEM TO BE SOLVED: To resolve a problem that, in a pixel subjected to intense light, dark-area-gradation deterioration is generated in the application of MOS type solid-state imaging elements, measures to cope with the situation of providing dark-area-gradation deterioration suppression elements in a pixel region results in desensitization of the pixel and a decrease in photo diode area, and further saturation level is degraded because of clipping the photodiode when adding a skip transistor outside. SOLUTION: There is provided a dark-area-gradation deterioration correction circuit equipped with a register 32 for setting a high luminance clamp level Smx whose luminance level is higher than that corresponding to the dark-area-gradation deterioration; a comparator 35 for comparing sampling signals Smp from the solid-state imaging elements with a threshold level Th1 lower than the black level to make switching signals Sch active, and outputting the signals when the sampling signals Smp is below the threshold level; and a selector 33 for inputting both the sampling signals Smp and the high luminance clamp level Smx to select the sampling signals Smp when the switching signals Sch are inactive, while selecting the high luminance clamp level Smx when the switching signals Sch are active. COPYRIGHT: (C)2006,JPO&NCIPI
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