发明名称 CAPACITOR AND METHOD FOR MANUFACTURING THE SAME, FILTER USING THE SAME AND DIELECTRIC THIN FILM TO BE USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a capacitor, its manufacturing method, a filter using it and a dielectric thin film using it for improving the adhesiveness of a dielectric layer and a lower electrode while increasing an electrostatic capacity. SOLUTION: A capacitor 10 is provided with a lower electrode 14A; a dielectric layer 16 having an SiO<SB>2</SB>layer 20 formed on the lower electrode 14A, an SiON layer 21 formed on the SiO<SB>2</SB>layer 20, and an Si<SB>3</SB>N<SB>4</SB>layer 22 formed on the SiON layer 21; and an upper electrode 14B formed on the dielectric layer 16. When the SiO<SB>2</SB>layer 20 is interposed between the lower electrode 14A and the Si<SB>3</SB>N<SB>4</SB>layer 22, the lower electrode 14A and the Si<SB>3</SB>N<SB>4</SB>layer 22 are more strongly adhered than such a case that the Si<SB>3</SB>N<SB>4</SB>layer 22 is directly formed on the lower electrode 14A just like a conventional capacitor. Furthermore, when the SiON layer 21 is interposed between the SiO<SB>2</SB>layer 20 and the Si<SB>3</SB>N<SB>4</SB>layer 22, the SiO<SB>2</SB>layer 20 and the Si<SB>3</SB>N<SB>4</SB>layer 22 are more strongly adhered. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006222396(A) 申请公布日期 2006.08.24
申请号 JP20050036703 申请日期 2005.02.14
申请人 TDK CORP 发明人 SHIBATA MAKOTO;MIYAZAKI MASAHIRO
分类号 H01G4/33;H01G4/10;H01G4/12;H01L21/318;H01L21/822;H01L27/04 主分类号 H01G4/33
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