| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which current leakage is retarded. SOLUTION: The semiconductor device comprises an element isolation film 2 formed on a semiconductor substrate 1, a gate oxide film 3a of a high voltage drive transistor, a gate electrode 4a formed on the gate oxide film 3a, an impurity region 7b formed on the semiconductor substrate 1 and functioning as the source and drain of a low voltage drive transistor, a first etching stopper film 9 formed, respectively, on the element isolation films 2a, 2b and the gate electrode 4a on the semiconductor substrate 1, a second etching stopper film 10 formed on the first etching stopper film 9 and located above the impurity region 7b, an insulating film 11 formed on the first etching stopper film 9 and the second etching stopper film 10, and a contact hole 11b formed in the insulating film 11 and located above the impurity region 7b. COPYRIGHT: (C)2006,JPO&NCIPI
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