| 摘要 |
A semiconductor chip capable of implementing wire bonding over active circuits (BOAC) is provided. The semiconductor chip includes a bonding pad structure which includes a bondable metal pad, a top interconnection metal layer, a stress-buffering dielectric, and at least a first via plug between the bondable metal pad and the top interconnection metal layer. The semiconductor chip also includes at least an interconnection metal layer, at least a second via plug between the interconnection metal layer and the bonding pad structure, and an active circuit situated underneath the bonding pad structure on a semiconductor substrate.
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