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发明名称
GAN-BASED LIGHT EMITTING DIODE USING THE P-TYPE OHMIC METAL FORMATTING ON TUNNELING LAYER
摘要
申请公布号
KR100618288(B1)
申请公布日期
2006.08.24
申请号
KR20050023092
申请日期
2005.03.21
申请人
ITSWELL CO., LTD.
发明人
KIM, SEONG JIN;KIM, CHANG YEN;CHOI, YONG SEOK;HAN, YOUNG HEON;OH, DONG JU;YU, SOON JAE
分类号
H01L33/14
主分类号
H01L33/14
代理机构
代理人
主权项
地址
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