发明名称 |
EXTREME ULTRAVIOLET SOFT X-RAY PROJECTION LITHOGRAPHIC METHOD AND MASK DEVICES |
摘要 |
The present invention relates to reflective masks and their use for reflecting extreme ultraviolet soft x-ray photons to enable the use of extreme ultraviolet soft x-ray radiation projection lithographic methods and systems for producing integrated circuits and forming patterns with extremely small feature dimensions. The projection lithographic method includes providing an illumination sub-system for producing and directing an extreme ultraviolet soft. x-ray radiation lambd from an extreme ultraviolet soft x-ray source; providing a mask sub-system illuminated by the extreme ultraviolet soft x-ray radiation lambd produced by the illumination sub-system and providing the mask sub-system includes providing a patterned reflective mask for forming a projected mask pattern when illuminated by radiation lambd. Providing the patterned reflective mask includes providing a Ti doped high purity SiO2 glass wafer with a patterned absorbing overlay overlaying the reflective multilayer coated Ti doped high purity SiO2 glass defect free wafer surface that has an Ra roughness <=0.15 nm. The method includes providing a projection sub-system and a print media subject wafer which has a radiation sensitive wafer surface wherein the projection sub-system projects the projected mask pattern from the patterned reflective mask onto the radiation sensitive wafer surface. |
申请公布号 |
EP1218796(A4) |
申请公布日期 |
2006.08.23 |
申请号 |
EP20000945368 |
申请日期 |
2000.07.13 |
申请人 |
CORNING INCORPORATED |
发明人 |
DAVIS, CLAUDE, L.;HRDINA, KENNETH, E.;SABIA, ROBERT |
分类号 |
G03F7/20;C23C14/02;C23C28/00;G02B5/08;G03F1/00;G03F1/24;G03F1/60;G21K1/06;G21K5/00;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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