| 摘要 |
A modulator integrated semiconductor laser device is provided. In the modulator integrated semiconductor laser device, a lower DBR (distributed Bragg reflector) layer (61) is formed on the substrate (60), an active layer (62) is formed on the lower DBR layer and includes a plurality of barrier layers alternating with a plurality of quantum well layers, and an external mirror (71) is spaced apart from a top of the active layer to output a portion of light emitted from the active layer by transmission and to reflect the remainder to the active layer. Two of the plurality of barrier layers (65a,65b) that contact both sides of at least one (65c) of the plurality of quantum well layers are doped with different types.
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