| 摘要 |
1,002,250. Digital data storage. SPERRY RAND CORPORATION. April 14, 1964 [April 23, 1963], No. 15314/64. Heading G4C. [Also in Division H3] In an associative matrix memory, each column storing a word is provided with an additional element which stores a parity bit for the corresponding word. An improved distinction between match and mismatch of a search word with a word in the store is thus obtained in the case when the search word and stored word differ by only one bit of data since the parity bits then also differ so that an enhanced signalto-noise ratio is obtained. The memory described is a thin film magnetic matrix with non- destructive read-out similar to that described in Specification 854,153, there being a storage film and a read-out film for each bit storage location. Words are stored in columns 20-0 &c. and consist of three data bits stored in cells 12-1 to 12-3 &c. and a parity bit stored in cells 12-P &c. A search word also comprising three data bits plus a parity bit is stored in a register 56 and causes currents of a polarity corresponding to the value, " 0 " or "1," of the corresponding search word bit to be applied to row lines 18-1 to 18-3, 18-P. If there is a mismatch at any storage cell, an output current is produced on the associated column sense line to provide an output at 62 indicative of the mismatch. The effect of the extra parity bit row is that the complete search word will always either equal a stored word or differ from it in at least two bit positions (including the parity bit position) so that the possibility of noise being incorrectly sensed as indicating a mismatch, is obviated. The column sense windings are of circuitous form, as shown at 34-40 in order to reduce selfinductance and to minimize the pick-up of extraneous signal. In a modification (Fig. 2, not shown) each parity bit cell is provided with an individual column sense line, connected, together with the column sense lines for the remaining bits of the column, to an OR gate. |
