发明名称 |
Method to enhance the initiation of film growth |
摘要 |
The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.
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申请公布号 |
EP1693888(A1) |
申请公布日期 |
2006.08.23 |
申请号 |
EP20050447030 |
申请日期 |
2005.02.16 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC);RENESAS TECHNOLOGY CORP. |
发明人 |
WILLEM MAES, JAN;DELABIE, ANNELIES;SHIMAMOTO, YASUHIRO |
分类号 |
H01L21/318;H01L21/314;H01L21/316;H01L21/3205 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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