| 摘要 |
An inventive semiconductor device for emitting light when applying a voltage comprises: a first semiconductor region ( 3 ) whose conductivity is based on charge carriers of a first type of conductivity, e.g. electrons; a second semiconductor region ( 5 ) whose conductivity is based on charge carriers of a second type of conductivity, e.g. holes, which have a charge opposite that of the charge carriers of the first type of conductivity and; an active semiconductor region ( 7 A 7 C), which is situated between the first semiconductor region ( 3 ) and the second semiconductor region ( 5 ) and in which the emission of light occurs, these regions being embedded in the quantum structures ( 13, 15 ) of a semiconductor material having a direct band gap in at least two different intercoupled configurations. In addition, a switching device ( 20 ) for directly or indirectly influencing the current flowing through the active semiconductor region ( 7 A 7 C) is assigned to the inventive semiconductor device and is designed for switching back and forth at least between a current flowing through the active semiconductor region with a current intensity (H 1 ) less than a specified threshold current intensity and a current flowing through the active semiconductor region with a current intensity (H 2 ) greater than the threshold current intensity. |
