WAFER, EPITAXIAL FILTER, AND METHOD OF MANUFACTURE THEREOF

摘要

Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1 x 10<10> atoms/cm<2> or less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/m<3> or less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.