| 发明名称 |
Method for producing a positively doped semiconductor with large forbidden band |
| 摘要 |
A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
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| 申请公布号 |
US7094288(B2) |
申请公布日期 |
2006.08.22 |
| 申请号 |
US20030455291 |
申请日期 |
2003.06.05 |
| 申请人 |
HOSSEINI TEHERANI FERECHTEH |
发明人 |
HOSSEINI TEHERANI FERECHTEH |
| 分类号 |
C30B25/12;C30B29/16;C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/203;H01L21/363;H01L21/365;H01L31/0296;H01L31/18;H01L33/00 |
主分类号 |
C30B25/12 |
| 代理机构 |
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代理人 |
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