发明名称 Method of manufacturing a CMOS image sensor
摘要 A method of manufacturing a CMOS image sensor. The present invention enables forming micro-lenses having a uniform shape throughout a semiconductor substrate. The method of manufacturing a CMOS image sensor includes: coating a color filter layer and a semiconductor substrate with a first photoresist; selectively exposing the first photoresist to light to define a planarization layer; coating the first photoresist with a second photoresist; selectively exposing the second photoresist to define a plurality of micro-lens bodies; and baking the plurality of micro-lens bodies to form a plurality of micro-lenses.
申请公布号 US7094519(B2) 申请公布日期 2006.08.22
申请号 US20030746703 申请日期 2003.12.24
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 JUNG MENG AN
分类号 G02B1/02;H01L31/0232;G02B3/00;H01L21/302;H01L21/461;H01L27/14;H01L27/146 主分类号 G02B1/02
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