发明名称 |
Method of manufacturing a CMOS image sensor |
摘要 |
A method of manufacturing a CMOS image sensor. The present invention enables forming micro-lenses having a uniform shape throughout a semiconductor substrate. The method of manufacturing a CMOS image sensor includes: coating a color filter layer and a semiconductor substrate with a first photoresist; selectively exposing the first photoresist to light to define a planarization layer; coating the first photoresist with a second photoresist; selectively exposing the second photoresist to define a plurality of micro-lens bodies; and baking the plurality of micro-lens bodies to form a plurality of micro-lenses.
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申请公布号 |
US7094519(B2) |
申请公布日期 |
2006.08.22 |
申请号 |
US20030746703 |
申请日期 |
2003.12.24 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
JUNG MENG AN |
分类号 |
G02B1/02;H01L31/0232;G02B3/00;H01L21/302;H01L21/461;H01L27/14;H01L27/146 |
主分类号 |
G02B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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