| 摘要 |
A semiconductor memory device including: a first memory cell array including a plurality of memory cells, a first switch circuit for transferring data to be programmed to at least one of the plurality of memory cells arranged in the first memory cell array, a latch circuit for latching the data transferred from the first switch circuit, a first write selector circuit for transferring the data transferred from the latch circuit, a first bit line connected to at least one of the plurality of memory cells and receiving the data transferred from the first write selector circuit, a second memory cell array including a plurality of memory cells that are different from the plurality of memory cells arranged in the first memory cell array, a second switch circuit for transferring data to be programmed to at least one of the plurality of memory cells arranged in the second memory cell array, a second write selector circuit connected to the second switch circuit and transferring the data transferred from the second switch circuit, and a second bit line connected to at least one of the plurality of memory cells arranged in the second memory cell array.
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