发明名称 |
Formation of a tantalum-nitride layer |
摘要 |
A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.
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申请公布号 |
US7094680(B2) |
申请公布日期 |
2006.08.22 |
申请号 |
US20050088072 |
申请日期 |
2005.03.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SEUTTER SEAN M.;YANG MICHAEL X.;XI MING |
分类号 |
H01L21/4763;C23C16/34;C23C16/44;C23C16/455;C23C16/56;H01L21/285;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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