发明名称 |
Hydrazine-free solution deposition of chalcogenide films |
摘要 |
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
|
申请公布号 |
US7094651(B2) |
申请公布日期 |
2006.08.22 |
申请号 |
US20040801766 |
申请日期 |
2004.03.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MITZI DAVID B;COPEL MATTHEW W |
分类号 |
H01L21/336;H01L21/368;C23C18/12;C23C22/02;C30B1/02;H01L29/786;H01L31/18 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|