发明名称 Voltage-matched, monolithic, multi-band-gap devices
摘要 Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.
申请公布号 US7095050(B2) 申请公布日期 2006.08.22
申请号 US20030275123 申请日期 2003.03.10
申请人 MIDWEST RESEARCH INSTITUTE 发明人 WANLASS MARK W.;MASCARENHAS ANGELO
分类号 H01L33/00;H01L27/15;H01L31/042;H01L31/068 主分类号 H01L33/00
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