发明名称 |
Structure and method of liner air gap formation |
摘要 |
A structure and method of a semiconductor device with liner air gaps next to interconnects and dielectric layers. A dielectric layer is formed over a lower dielectric layer and a lower interconnect over a substrate. We form an interconnect opening in the dielectric layer. The opening has sidewalls of the dielectric layer. A sacrificial liner is formed over the sidewalls of the interconnect opening. An upper interconnect is formed that fills the opening. We remove the sacrificial liner/spacers to form (air) liner gaps.
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申请公布号 |
US7094669(B2) |
申请公布日期 |
2006.08.22 |
申请号 |
US20040910499 |
申请日期 |
2004.08.03 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
BU XIAOMEI;SEE ALEX;LEE TAE JONG;ZHANG FAN;LIM YEON KHENG;HSIA LIANG CHOO |
分类号 |
H01L21/46;H01L21/301;H01L21/4763;H01L21/76;H01L21/78 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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