发明名称 |
Method of forming poly-silicon thin film transistors |
摘要 |
A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.
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申请公布号 |
US7094656(B2) |
申请公布日期 |
2006.08.22 |
申请号 |
US20030733721 |
申请日期 |
2003.12.11 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN CHI-LIN;HUANG SHUN-FA;WANG LIANG-TANG |
分类号 |
H01L21/20;H01L21/336;H01L21/00;H01L29/49;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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