发明名称 |
Photodetector with hetero-structure using lateral growth |
摘要 |
A structure and method of fabrication for a Si based material p-i-n photodetector is disclosed. The light is absorbed in an undoped layer containing SiGe or Ge in such a manner that the absorption length is not limited by a critical thickness of the SiGe or Ge layer. The result is achieved by growing the SiGe or Ge layer from the walls of a trench in monocrystalline Si using lateral epitaxial. A second, doped material is disposed over the undoped layer for biasing and photocarrier collection in the p-i-n diode.
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申请公布号 |
US7095006(B2) |
申请公布日期 |
2006.08.22 |
申请号 |
US20030737038 |
申请日期 |
2003.12.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG MIN |
分类号 |
G01J1/44;H01J40/14;H01L31/00;H01L31/0328;H01L31/075;H01L31/105;H01L31/18 |
主分类号 |
G01J1/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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