发明名称 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
摘要 <p>In a semiconductor device, a spacer layer is formed around an imaging element on a semiconductor substrate and a glass lid is combined to the spacer layer via an adhesive layer. A space is made between the semiconductor substrate and the glass lid so as to be positioned at a region where the imaging element is disposed. As a result, in forming a hollow section between a light transmitting material and an active element on the semiconductor substrate, it is unnecessary to apply a large load and to superimpose patterns when the light transmitting material is combined to the semiconductor substrate.</p>
申请公布号 KR20060092079(A) 申请公布日期 2006.08.22
申请号 KR20060013914 申请日期 2006.02.14
申请人 SHARP KABUSHIKI KAISHA 发明人 ONO ATSUSHI
分类号 H01L27/146;H01L23/498;H01L27/14;H04N5/335;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L27/146
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