发明名称 Process for making a CMOS image sensor
摘要 An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.
申请公布号 US7095066(B2) 申请公布日期 2006.08.22
申请号 US20040753246 申请日期 2004.01.08
申请人 EASTMAN KODAK COMPANY 发明人 LAVINE JAMES P.
分类号 H01L31/062;H01L27/00 主分类号 H01L31/062
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