Method of fabricating a Fin Field Effect Transistor having a plurality of protrudent channels,申请号KR20040104001-传众专利搜索

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发明名称	Method of fabricating a Fin Field Effect Transistor having a plurality of protrudent channels
摘要
申请公布号	KR100614800(B1)	申请公布日期	2006.08.22
申请号	KR20040104001	申请日期	2004.12.10
申请人		发明人
分类号	H01L21/336;H01L21/28;H01L21/31;H01L21/82	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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