发明名称 EUV source
摘要 The EUV radiation source of the invention comprises an irradiation chamber ( 1 ) containing an irradiation zone ( 3 ) into which a stream of radiation-generator material is generated such as a flow of xenon propagating along a direction (II-II) extending transversely relative to an optical axis (I-I). The irradiation zone ( 3 ) is in the proximity of a diaphragm ( 4 ) oriented on the optical axis (I-I) and putting the irradiation chamber ( 1 ) into communication with a transmission chamber ( 2 ). Power laser beams ( 5, 6 ) strike the stream of radiation-generator material in the irradiation zone ( 3 ) and produce EUV radiation which propagates through the diaphragm ( 4 ) and which is conditioned in the transmission chamber ( 2 ) by elliptical mirrors ( 13 ). Differential pumps ( 11, 12 ) maintain a pressure P 2 in the transmission chamber ( 2 ) that is well below the pressure P 1 in the irradiation chamber ( 1 ). The low pressure in the transmission chamber ( 2 ) ensures that the EUV radiation is transmitted with little attenuation to a zone of use, without requiring voluminous high speed pumps ( 11, 12 ).
申请公布号 US7095038(B2) 申请公布日期 2006.08.22
申请号 US20040946109 申请日期 2004.09.22
申请人 ALCATEL 发明人 BARTHOD BENOIT;RIVAL JEAN-LUC;MORPAIN MATTHIEU
分类号 G21K5/00;H01J49/00;G03F7/20;G21K5/02;G21K5/08;H01L21/027;H05G1/00;H05G2/00 主分类号 G21K5/00
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