PHASE SHIFT MASK FOR PREVENTING HAZE

摘要

Disclosed is a phase shift mask. Residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of a surface of the phase shift mask. Diffusion of the residual ions into the surface of the mask is suppressed during a photomask wet cleaning process in order to prevent the haze.