发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH DUAL STORAGE NODE AND METHODS OF MANUFACTURING AND OPERATING THE SAME |
摘要 |
A semiconductor memory device with a dual storage node structure as well as methods of fabricating and operating such a device are provided. The semiconductor memory device includes a substrate, a first transistor formed on the substrate, a first storage node connected to a source region of the first transistor, a second storage node connected to a drain region of the first transistor, and a plate line commonly contacting the first storage node and the second storage node. |
申请公布号 |
KR20060091162(A) |
申请公布日期 |
2006.08.18 |
申请号 |
KR20050012039 |
申请日期 |
2005.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN, SANG MIN;KOO, BON JAE;PARK, YOON DONG;PARK, YOUNG SOO |
分类号 |
H01L27/10;H01L29/78 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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