发明名称 PHOTOMASK, METHOD OF GENERATING MASK PATTERN, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A photomask includes a pair of light-transmission opening patterns extending in parallel and each having a substantially identical line width with a center light-shielding linear portion extending linearly therebetween, and semi-transmissive regions arranged to sandwich the pair of light-transmission opening patterns from opposing sides in a direction of width. The semi-transmissive region serves as an in-phase semi-transmissive portion with such a characteristic that transmitted light is in phase with light transmitted through the light-transmission opening pattern. In addition, the semi-transmissive region includes patterns arranged at such a small pitch as not resolved by illumination of light.
申请公布号 KR20060091246(A) 申请公布日期 2006.08.18
申请号 KR20060013413 申请日期 2006.02.13
申请人 RENESAS TECHNOLOGY CORP. 发明人 NAKAO SHUJI
分类号 G03F1/32;G03F1/36;G03F1/68;H01L21/027 主分类号 G03F1/32
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