发明名称 |
PHOTOMASK, METHOD OF GENERATING MASK PATTERN, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A photomask includes a pair of light-transmission opening patterns extending in parallel and each having a substantially identical line width with a center light-shielding linear portion extending linearly therebetween, and semi-transmissive regions arranged to sandwich the pair of light-transmission opening patterns from opposing sides in a direction of width. The semi-transmissive region serves as an in-phase semi-transmissive portion with such a characteristic that transmitted light is in phase with light transmitted through the light-transmission opening pattern. In addition, the semi-transmissive region includes patterns arranged at such a small pitch as not resolved by illumination of light. |
申请公布号 |
KR20060091246(A) |
申请公布日期 |
2006.08.18 |
申请号 |
KR20060013413 |
申请日期 |
2006.02.13 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NAKAO SHUJI |
分类号 |
G03F1/32;G03F1/36;G03F1/68;H01L21/027 |
主分类号 |
G03F1/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|