METHODS OF FABRICATING FEROELECTRIC MEMORY DEVICE HAVING PARTIALLY CHEMICAL MECHANICAL POLISHING PROCESS,申请号KR20050012081-传众专利搜索

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发明名称	METHODS OF FABRICATING FEROELECTRIC MEMORY DEVICE HAVING PARTIALLY CHEMICAL MECHANICAL POLISHING PROCESS
摘要
申请公布号	KR20060091190(A)	申请公布日期	2006.08.18
申请号	KR20050012081	申请日期	2005.02.14
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	CHOI, SUK HUN;BAE, BYOUNG JAE;SON, YOON HO
分类号	H01L27/105;H01L21/304	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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