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发明名称
FABRICATION OF A FAST- SWITCHING THYRISTOR BY PROTON IRRADIATION- A SMART MINORITY CARRIER LIFETIME CONTROL METHOD
摘要
申请公布号
KR100616115(B1)
申请公布日期
2006.08.18
申请号
KR20050080418
申请日期
2005.08.31
申请人
SEMIWELL SEMICONDUCTOR CO., LTD.
发明人
C.L. ZHANG
分类号
H01L29/40
主分类号
H01L29/40
代理机构
代理人
主权项
地址
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