| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a fine pattern having a preferable profile by improving solubility (easy removing property) on removing a barrier film in liquid immersion lithography. <P>SOLUTION: First, a resist film 102 is formed on a substrate 101. A first barrier film 103 using a water-based solvent is formed on the formed resist film 102, and consecutively a second barrier film 104 using an alcohol as a solvent is formed on the first barrier film 103. Next, the resist film 102 is selectively irradiated with exposure light 106 through the first barrier film 103 and the second barrier film 104 for pattern exposure while a liquid 105 is placed on the second barrier film 104. Then, after the first barrier film 103 and the second barrier film 104 are removed, the resist film 102 subjected to the pattern exposure is developed to form a resist pattern 102a of the resist film 102. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
