METHOD OF MANUFACTURING EPITAXIAL SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the method of manufacturing an epitaxial semiconductor substrate whose gettering ability is improved or the method of manufacturing a semiconductor device whose operating characteristic is improved. SOLUTION: In one embodiment of the method of manufacturing an epitaxial semiconductor substrate, a gettering layer grows on the semiconductor substrate. Then, an epitaxial layer can be formed on the gettering layer. A semiconductor device can be formed on the epitaxial layer. COPYRIGHT: (C)2006,JPO&NCIPI