发明名称 INSULATING FILM, ITS FORMING METHOD, SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an insulating film having a desired relative dielectric constant and exhibiting excellent mechanical strength, and to provide a method for forming that insulating film easily, a semiconductor element having that insulating film, an electronic device and an electronic apparatus. SOLUTION: The insulating film for insulating conductors from each other is formed by filling the gaps of an aggregate of insulating particles 41 with an insulating filler 42 for enhancing the strength of the insulating film. The insulating film regulates its relative dielectric constant by employing a material having a relative dielectric constant different from that of the insulating particles 41 as the filler 42. For example, particles having a relative dielectric constant lower than that of the insulating particles 41 are employed as the filler 42 in order to regulate (lower) the relative dielectric constant of the entire insulating film. Such an insulating film is applied suitably to an interlayer insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006216793(A) 申请公布日期 2006.08.17
申请号 JP20050028206 申请日期 2005.02.03
申请人 SEIKO EPSON CORP 发明人 SEKI SHINSUKE
分类号 H01L21/316;H01L29/78 主分类号 H01L21/316
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