| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of SiP formation in which an inductance with a large Q-value is provided. SOLUTION: Insulation layers (15, 17) are formed by laying resin layers on a substrate 10 in layers, and rewiring layers (16, 18) are formed while being buried in the insulation layers (15, 17). An inductance L is formed while being buried in the insulation layers (15, 17) and connected with the rewiring layers (16, 18), and eddy current suppression layers (S1, S2) are formed while being buried in the insulation layers (15, 17) between the substrate 10 and the inductance L. COPYRIGHT: (C)2006,JPO&NCIPI
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