| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device, capable of reducing the problem of an RC delay caused by the extension of a data line, such as a global data line or a local data line, and achieving high speed and large capacity for, e.g., an eDRAM constituted by stacking submacros. SOLUTION: The semiconductor memory device is constituted, in such a manner that a data control unit 13B connected to an interface section via global data lines RDL and WDL, a first memory block 13A constituted of a first memory cell array connected to one side of the data control unit via a first local data line DQt/c and a first sense amplifier section connected to this first memory cell array, and a second memory block 13C constituted of a second memory cell array connected to the other side of the data control unit 13B via a second local data line DQ/c and a second sense amplifier section connected to this second memory cell array are sequentially connected to the interface section to constitute a submacro 13. COPYRIGHT: (C)2006,JPO&NCIPI |
