| 摘要 |
On embodiment of the invention provides a semiconductor component with at least one thin oxide transistor, the gate of which is directly connected to a first electrical potential by means of a connecting element. The connecting element contains a thermal desired breaking point. In order to realize an integrated backup capacitance, at least one of the further terminals of the thin oxide transistor (source or drain) is directly connected to a second potential, that is different from the first potential.
|
