| 摘要 |
1,073,748. Semi-conductor devices. COMPAGNIE GENERALS D'ELECTRICITE. Aug. 17, 1964 [Aug. 20, 1963; Dec. 24, 1963] No. 33605/64. Heading H1K. One region 3 of a semi-conductor body containing a PN junction between regions 3 and 4 is soldered under pressure to a metal plate 13a by means of an alloy layer 14a, the shapes of the components being such that the mechanical stresses set up in the region 3 cause the equipotential surfaces 15, when a potential difference is applied across the junction between the plate 13a and another electrode 1, to be closer together in the interior of the region 3 near the plate 13a (as shown at 16) than at the surface of the region near the edges of the junction (as shown at 17). The object is to allow a non-destructive leakage current to flow through the junction under reverse overload conditions, the reverse resistance decreasing suddenly at a threshold voltage. The device may be a diode rectifier or may form part of a larger device, such as a transistor. |
