| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a forming method for a stacked capacitor capable of preventing oxidation at the time of forming the dielectric layer of the bottom electrode of the capacitor. <P>SOLUTION: The capacitor consists of an interior capacitor plate 60 with at least one side wall, an oxidation barrier layer 70 arranged so that it may cover the at least one side wall, capacitor dielectric plate 90 formed on the foregoing interior capacitor plate, and exterior capacitor plate 100 formed on the capacitor dielectric plate. An insulating dielectric layer 80 is formed on the oxidation barrier layer 70. The insulating dielectric layer consists of a composite different from the oxidation barrier layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
