发明名称 TOP CONTACT TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME TOP CONTACT TYPE FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of forming two or more metals in a narrow pitch on an organic material layer, etc. SOLUTION: The method of forming at least two metals 6 on at least one organic material layer 5, with the shortest distance between the metals larger than zero and not more than 100μm, is provided. This method employs a substrate having a bridge structure 4 which consists of an upright portion extended upwards from the surface of the substrate and a crossing portion which is extended from the upright portion and crosses the substrate so as to divide a space above the substrate into two, and includes a process wherein an organic material 5 is so evaporated on the substrate as to continuously coat the surface of the substrate divided into two and the surface of the substrate below the crossing portion, and a process wherein a metal 6 is evaporated on the organic material 5 from a predetermined direction above the crossing portion after evaporating the organic material 5. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006216718(A) 申请公布日期 2006.08.17
申请号 JP20050027034 申请日期 2005.02.02
申请人 INSTITUTE OF PHYSICAL & CHEMICAL RESEARCH 发明人 YAGI IWAO;SHIGEFUJI NORIYUKI;TSUKAGOSHI KAZUHITO;AOYANAGI KATSUNOBU
分类号 H01L29/786;H01L21/28;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L51/05 主分类号 H01L29/786
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