发明名称 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
摘要 A heat treatment apparatus for performing heat treatment to a semiconductor wafer (W) at a prescribed temperature is provided with a flexible heating plate (60), which is arranged in a treatment container main body (52) for storing the semiconductor wafer (W) and performs the heat treatment by bringing the semiconductor wafer (W) close to the surface of the heating plate or by placing the wafer on the surface of the heating plate; and a means (70) for bringing an arbitrary portion of the heating plate (60) into contact with or separating it from the semiconductor wafer (W). Thus, temperature control in accordance with warping of the semiconductor wafer (W) and an actual device is made possible, a uniform line width can be provided, and product yield can be improved.
申请公布号 WO2006085489(A1) 申请公布日期 2006.08.17
申请号 WO2006JP301870 申请日期 2006.02.03
申请人 TOKYO ELECTRON LIMITED;IWANAGA, SHUJI 发明人 IWANAGA, SHUJI
分类号 H01L21/027;H01L21/02 主分类号 H01L21/027
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